shottky barrier diode RB070M-30 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) general rectification (common cathode dual chip) ? features 1) small power mold type. (pmdu) 2) low ir 3) high reliability ? construction silicon epitaxial planar ? structure ? taping specifications (unit : mm) ? absolute maximum ratings (ta=25c) symbol unit v rm v v r v io a i fsm a tj c tstg c ? electrical characteristics (ta=25c) symbol min. typ. max. unit conditions v f 1 - 0.37 0.43 v i f =0.5a v f 2 - 0.44 0.49 v i f =1.5a reverse current i r - 9.0 50 a v r =30v forward voltage storage temperature ? 40 to ? 150 (*1)mounted on epoxy board. 180half sine wave parameter forward current surge peak (60hz ?1cyc) 30 junction temperature 150 reverse voltage (dc) 30 average rectified forward current (*1) 1.5 parameter limits reverse voltage (repetitive peak) 30 pmdu 1.2 3.05 0.85 4.00.1 2.00.05 1.550.05 1.810.1 4.00.1 1.00.1 3.50.05 1.750.1 8.00.2 0.250.05 1.5max 3.710.1 rohm : pmdu jedec :sod-123 manufacture date 0.90.1 1.60.1 2.60.1 3.50.2 0.80.1 0.10.1 0.05 1/3 2011.04 - rev.b data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RB070M-30 0 5 10 15 20 ave:9.30ns ta=25 if=0.5a ir=1a irr=0.25*ir n=10pcs 420 430 440 450 460 470 0 50 100 150 ave:96.0a 8.3ms ifsm 1cyc forward voltagevf(mv) vf-if characteristics forward current:if(ma) reverse current:ir(ua) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(ua) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map ifsm disresion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) forward power dissipation:pf(w) average rectified forward currentio(a) io-pf characteristics trr dispersion map reverse recovery time:trr(ns) 0.001 0.01 0.1 1 10 0 100 200 300 400 500 600 ta=-25 ta=125 ta=75 ta=25 ta=150 0.01 0.1 1 10 100 1000 10000 100000 0 5 10 15 20 25 30 ta=125 ta=75 ta=25 ta=-25 ta=150 1 10 100 1000 0 5 10 15 20 25 30 f=1mhz ave:441.5mv ta=25 if=1.5a n=30pcs 0 20 40 60 80 100 120 140 160 180 200 ta=25 vr=30v n=30pcs ave:8.828ua 300 310 320 330 340 350 360 370 380 390 400 ave:332.6pf ta=25 f=1mhz vr=0v n=10pcs 0 50 100 1 10 100 8.3ms ifsm 1cyc 8.3ms 0 50 100 150 1 10 100 t ifs 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) mounted on epoxy board 0 0.5 1 1.5 2 0123 dc d=1/2 sin(?180) 1ms im=10ma if=0.5a 300us time 2/3 2011.04 - rev.b www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RB070M-30 reverse power dissipation:p r (w) reverse voltage:vr(v) vr-p r characteristics ambient temperature:ta() derating curve?(io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc() derating curve?(io-tc) 0 0.1 0.2 0.3 0.4 0.5 0102030 sin(?180) dc d=1/2 0 1 2 3 4 5 0 25 50 75 100 125 150 sin(?180) dc d=1/2 0 1 2 3 4 5 0 25 50 75 100 125 150 sin(?180) dc d=1/2 t tj=150 d=t/t t vr io vr=15v 0a 0v t tj=150 d=t/t t vr io vr=15v 0a 0v 0 5 10 15 20 25 30 c=200pf r=0 c=100pf r=1.5k ave:8.70kv no break at 30kv electrostatic discharge test esd(kv) esd dispersion map 3/3 2011.04 - rev.b www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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